electrical crystallization mechanism and interface characteristics of nanowire znoal structures fabricated by the solution method电结晶机理和界面特性的纳米线znoal结构制造的解决方案的方法.pdfVIP

Hindawi Publishing Corporation Journal of Nanomaterials Volume 2012, Article ID 208362, 6 pages doi:10.1155/2012/208362 Research Article Electrical Crystallization Mechanism and Interface Characteristics of Nanowire ZnO/Al Structures Fabricated by the Solution Method Yi-Wei Tseng,1 Fei-Yi Hung,1 Truan-Sheng Lui,1 Yen-Ting Chen,1 Ren-Syuan Xiao,1 and Kuan-Jen Chen1, 2 1 Department of Materials Science and Engineering, Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan 2 The Instrument Center, National Cheng Kung University, Tainan 701, Taiwan Correspondence should be addressed to Fei-Yi Hung, fyhung@.tw Received 7 November 2011; Accepted 1 March 2012 Academic Editor: Somchai Thongtem Copyright © 2012 Yi-Wei Tseng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Both solution nanowire ZnO and sputtered Al thin film on SiO2 as the wire-film structure and the Al film were a conductive channel for electrical-induced crystallization (EIC). Direct current (DC) raised the temperature of the Al film and improved the crystallization of the nanostructure. The effects of EIC not only induced Al atomic interface diffusion, but also doped Al on the roots of ZnO wires to form aluminum doped zinc oxide (AZO)/ZnO wires. The Al doping concentration and the distance of the ◦ ZnO wire increased with increasing the electrical duration. Also, the electrical current-induced temperature was ∼211