chemical etching of {hk0} silicon plates in edp part i experiments and comparison with tmah{ hk0 }的化学蚀刻硅板与tmah edp第一部分实验和比较.pdfVIP

Active and Passive Elec. Comp., 2000, Vol. 23, pp. 37-51 (C) 2000 OPA (Overseas Publishers Association) N.V. Reprints available directly from the publisher Published by license under Photocopying permitted by license only the Gordon and Breach Science Publishers imprint. Printed in Singapore. CHEMICAL ETCHING OF {hk0} SILICON PLATES IN EDP PART h EXPERIMENTS AND COMPARISON WITH TMAH C. R. TELLIER*, T. G. LEBLOIS and A. CHARBONNIERAS Laboratoire de Chronombtrie, Electronique et Pibzoblectricitb, Ecole Nationale Supbrieure de Mbcanique et des Microtechniques, 26 Chemin de l’Epitaphe, 25030 Besancon Cedex, France (Received12 April 2000; In finalform 25 April 2000) This paper deals with the anisotropic chemical etching of various silicon plates etched in EDP. Changes with orientation in geometrical features of etched surface and in the etching shape of starting circular sections are systematically investigated. These etching shapes are compared with shapes produced by etching in KOH and TMAH solutions; This experimental study allows us to determine the dissolution slowness surface for the EDP solution and to investigate the real influence ofthe etchant on two dimensional and three dimensional etching shapes. Keywords: Etching; Silicon plates; EDP solution 1. INTRODUCTION In the last decade there is a continuous development of the chemical etching of silicon crystal. Emphasis is placed on etchants used for the bulk micromachining of silicon micromechanical devices [1 -7] such as EDP [1, 5] and KOH [1-3] solutions or such TMAH based etchants [6, 7] whose interest in micromachining is still in evaluation actually. Most ofworks [1,4-6]were devoted to { 100} or { 110} surfaces even i