comparative study of , , and beo ultrathin interfacial barrier layers in si metal-oxide-semiconductor devices,比较研究,成为超薄界面势垒层硅金属氧化物半导体设备.pdfVIP

Hindawi Publishing Corporation Active and Passive Electronic Components Volume 2012, Article ID 359580, 7 pages doi:10.1155/2012/359580 Research Article Comparative Study of SiO , Al O , and BeO Ultrathin Interfacial 2 2 3 Barrier Layers in Si Metal-Oxide-Semiconductor Devices J. H. Yum,1, 2 J. Oh,3 Todd. W. Hudnall,4 C. W. Bielawski,5 G. Bersuker,2 and S. K. Banerjee1 1 Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78758, USA 2 SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, USA 3 School of Integrated Technology, College of Engineering, Yonsei University, 162-1 Songdo-dong, Incheon 406-840, Republic of Korea 4 Department of Chemistry and Biochemistry, Texas State University, 601 University Drive, San Marcos, TX 78666, USA 5 Department of Chemistry, UT, Austin, TX 78712, USA Correspondence should be addressed to J. H. Yum, redeyes78@ Received 19 March 2012; Accepted 12 September 2012 Academic Editor: Edward Yi Chang Copyright © 2012 J. H. Yum et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO , Al O , or BeO between the HfO gate dielectric and Si substrate in