degradation of junction parameters of an electrically stressed npn bipolar transistor结退化参数的电强调npn双极型晶体管.pdfVIP

Active and Passive Elec. Comp., 2001, Vol. 24, pp. 155-163 )2001 OPA (Overseas Publishers Association) N.V. Reprints available directly from the publisher Published by license under Photocopying permitted by license only the Gordon and Breach Science Publishers imprint, member of the Taylor Francis Group. DEGRADATION OF JUNCTION PARAMETERS OF AN ELECTRICALLY STRESSED NPN BIPOLAR TRANSISTOR N. TOUFIK, F. PILANCHON and P. MIALHE* C.E.F., University of Perpignan, 52 av. de Villeneuve, F-66860 Perpignan (Received20 April 2001; h revisedform 15 May 2001) The effect of an electrical ageing on npn bipolar transistor has been studied. The current gain decreases substantially and the electrical properties are discussed. The emitter-base junction parameters are degraded during the electrical stress experiments. Both the amplitude and the rate of this degradation depend on the stress duration. The evaluation of these parameters allows to discuss hot carrier degradation process, to estimate the stress magnitude and to control the device. 1. INTRODUCTION The bipolar transistor, one of the most important semiconductor de- vices, has had an unprecedented impact on the electronic industry in general and on solid state research in particular [1]. Degradation of the performance of silicon bipolar transistors by an electrical stress [2,3,4,5] is an important part of reliability considera- tions. A shift of the threshold voltage is observed, the carrier mobility, the current gain of the bipolar transistor, the leakage current of the reverse-biased p-n junction, the emitter series resistance and the ideality factor of the p-n junction are degraded [5]. The current gain Ic/In of bipolar transistors strongly decreases when the oxide over the emitter-base junction is damaged [3,4]. This can occur in norm