direct growth of high-quality inp layers on gaas substrates by mocvd在砷化镓基板上直接生长高质量的输入层由金属.pdfVIP

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direct growth of high-quality inp layers on gaas substrates by mocvd在砷化镓基板上直接生长高质量的输入层由金属.pdf

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direct growth of high-quality inp layers on gaas substrates by mocvd在砷化镓基板上直接生长高质量的输入层由金属

Active and Passive Elec. Comp. , 2003, Vol. 26(2), pp. 71–79 DIRECT GROWTH OF HIGH-QUALITY InP LAYERS ON GaAs SUBSTRATES BY MOCVD a a b b K. F. YARN *, W. C. CHIEN , C. L. LIN and C. I. LIAO aFar East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih, Tainan 744, Taiwan, Republic of China; bDepartment of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan, Republic of China (Received 7 November 2002; In ﬁnal form 17 November 2002) In this report, we have overcome the drawback of surface roughness of metamorphic buffer layer by LP-MOCVD technique and have grown InP metamorphic buffer layers with various thickness on misoriented GaAs (1 0 0) substrates with 10 degree towards (1 1 1)A. The grown ﬁlms are characterized by optical microscopy, atomic force microscopy, secondary ion mass spectrometry, transmission electron microscopy and double-crystal X-ray diffraction. We also analyze the surface morphology, which is dependent on growth temperature, group III and group V partial pressure, growth rate and V=III ratios. A mirror-like, uniform surface and high crystal quality of the metamorphic buffer layer directly grown on a GaAs substrate can be achieved. Finally, to investigate the performance of the metamorphic microwave devices, we also fabricate the InAlAs=InGaAs metamorphic HEMT on GaAs substrates. Keywords : Metamorphic buffer layer; LP-MOCVD; HEMT 1 INTRODUCTION The InP-based material has shown great potential for long-distance communications (lasers, light-emitting diodes or detectors) [1,2], high frequency electronic devices (e.g. heterojunc- tion bipolar transistors and modulation doped