size-dependent indirect excitation of trivalent er ions via si nanocrystals embedded in a silicon-rich silicon oxide matrix deposited by ecr-pecvd尺度依赖的间接激发er三价离子通过硅纳米晶体嵌入在一个富含硅元素的氧化硅矩阵由ecr-pecvd沉积.pdf

Hindawi Publishing Corporation Journal of Nanotechnology Volume 2009, Article ID 769142, 5 pages doi:10.1155/2009/769142 Research Article Size-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVD G. Zatryb,1 A. Podhorodecki,1 J. Misiewicz,1 J. Wojcik,2 and P. Mascher2 1 Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland 2 Centre for Emerging Device Technologies, Hamilton, ON, Canada L8S 4L7 Correspondence should be addressed to G. Zatryb, grzegorz.zatryb@pwr.wroc.pl Received 21 July 2009; Revised 7 October 2009; Accepted 23 December 2009 Recommended by John A. Capobianco Silicon nanocrystals (Si-nc) embedded in a silicon-rich silicon oxide matrix codoped with Er3+ ions have been fabricated by electron-cyclotron plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been obtained within a broad pump wavelength range. The influence of different nanocrystal sizes on the excitation transfer from the Si-nc to Er3+ ions is discussed. Copyright © 2009 G. Zatryb et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. 1. Introduction the band gap and transfers its recombination energy to Er3+ ion by Auger-like process. The second energy transfer process Erbium codoped silicon nanocrystals have become a subject