selenopentathionic and telluropentathionic acids as precursors for formation of semiconducting layers on ewline the surface of polyamideselenopentathionic和telluropentathionic酸前体形成的半导体层ewline聚酰胺的表面.pdfVIP

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selenopentathionic and telluropentathionic acids as precursors for formation of semiconducting layers on ewline the surface of polyamideselenopentathionic和telluropentathionic酸前体形成的半导体层ewline聚酰胺的表面.pdf

selenopentathionic and telluropentathionic acids as precursors for formation of semiconducting layers on ewline the surface of polyamideselenopentathionic和telluropentathionic酸前体形成的半导体层ewline聚酰胺的表面

Hindawi Publishing Corporation International Journal of Photoenergy Volume 2007, Article ID 72497, 7 pages doi:10.1155/2007/72497 Research Article Selenopentathionic and Telluropentathionic Acids as Precursors for Formation of Semiconducting Layers on the Surface of Polyamide Skirma Zalenkiene, Judita Sukyte, Remigijus Ivanauskas, and Vitalijus Janickis Department of Inorganic Chemistry, Kaunas University of Technology, Radvilenu pl. 19, 50254 Kaunas, Lithuania Received 20 April 2006; Revised 8 August 2006; Accepted 8 August 2006 Recommended for Publication by Sabry Abdel-Mottaleb The layers of copper chalcogenides, which were formed on the surface of semihydrophilic polymer—polyamide 6 (PA) using monoselenopentathionic H SeS O and monotelluropentathionic H TeS O acids as precursors of chalcogens, were characterized. 2 4 6 2 4 6 Fourier transform infrared (FT-IR) and UV spectroscopy were used to monitor the effect of chalcogens on the changes in structure of PA corresponding to the concentration of the precursor’s solution and an exposure time. The IR spectra of modified PA were completely different from that of the initial PA. Further interaction of chalcogenized PA with copper (II/I) salt solution leads to the formation of Cu S, Cu Se, Cu Te, and mixed –Cu S–Cu Se and Cu S–Cu Te layers which have different electric transport x x x x y x y properties. The surface properties of PA after treatment are studied using AFM and XRD. The electrical resistances of layers with various composition formed over a wide concentration range 0.01–0.5 mol ·dm−3 of precursor’s solution were measured. Variation in the conductivity of l

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