near-infrared sub-bandgap all-silicon photodetectors state of the art and perspectives近红外sub-bandgap all-silicon光电探测器的艺术和观点.pdfVIP

Sensors 2010, 10, 10571-10600; doi:10.3390/s101210571 OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Review Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives Maurizio Casalino *, Giuseppe Coppola, Mario Iodice, Ivo Rendina and Luigi Sirleto Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche (CNR), Via P. Castellino 111, 80131 Napoli, Italy; E-Mails: giuseppe.coppola@r.it (G.C.); mario.iodice@r.it (M.I.); ivo.rendina@r.it (I.R.); luigi.sirleto@r.it (L.S.) * Author to whom correspondence should be addressed; E-Mail: maurizio.casalino@r.it; Tel.: +39-081-613-2345; Fax: +39-081-613-2598. Received: 15 October 2010; in revised form: 10 November 2010 / Accepted: 20 November 2010 / Published: 29 November 2010 Abstract: Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near- infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a