电池片工艺流程（Cell chip process）.docVIP

电池片工艺流程（Cell chip process） First, the battery chip process: Cashmere (INTEX) - diffusion (DIFF) - after cleaning (edge / go PSG) - PACKING (PECVD) - silk screen, sintering (PRINTER) - test, sorting (TESTER+SORTER) - packaging Two. Introduction of process: (I) prior cleaning; The purpose of cleaning process before 1.RENA: (1) remove mechanical damage layer (physical damage from silicon bar cutting) on silicon wafer surface (2) remove surface oil pollution (using HF) and metal impurities (using HCl) (3) formation of rugged suede, the use of light trapping principle to increase the absorption of sunlight, to some extent, increased the PN junction area, improve the short-circuit current (Isc), and ultimately improve the photoelectric conversion efficiency of the battery. 2, before cleaning process steps: cashmere, alkali washing, pickling, drying Etch bath: etching tank used for making velvet. The solution used is HF+HNO3, which acts: (1) remove mechanical damage layer on silicon wafer surface; (2) formation of irregular suede. Alkaline Rinse: caustic washing tank. The solution used is KOH, which acts: (1) cleaning the surface of the porous silicon; (2) the acid solution remaining on the surface of silicon wafer after etching. Acidic Rinse: pickling bath. The solution used is HCl+HF, which acts: (1) alkali solution remaining on the surface of silicon wafer after neutralization and washing; (2).HF can remove the surface oxidation layer (SiO2) of silicon chip to form hydrophobic surface, so it is easy to dry; (3) the Cl- in.HCl has the ability to carry metal ions and can be used to remove metal ions from the surface of silicon wafers. Equation of reaction involving 3. acid process: HNO3+Si=SiO2+NOx = +H2O SiO2+ 4HF=SiF4+2H2O SiF4+2HF=H2[SiF6] Si+2KOH+H2O = K2SiO3 +2H2 4. before cleaning process requirements (1) 5S control of film surface; Not allowed to touch the film table, you should change gloves frequently, to avoid the proliferation of dirty film. (2) weighing A. eac