低偏压分子电子器件的电导规律.pdfVIP

第 11 期 电　　子 　　学 　　报 Vol . 37 　No . 11 　2009 年 11 月 ACTA ELECTRONICA SINICA Nov . 　2009 　 低偏压分子电子器件的电导规律 张振华 ,李巧华 (长沙理工大学物理与电子科学学院 ,湖南长沙 410114) 　　摘 　要 : 　采用简化的对称势垒连续隧穿模型模拟复合分子线电子器件低偏压下电子隧穿过程 ,并由电子透射谱 随垒宽、垒距 、垒高及电子有效质量的变化规律推断低偏压下分子器件的电导规律. 结果发现 :随着势垒增宽或增高 , 分子器件的低偏压电导 G 明显变小 ;但是随着垒距或电子有效质量增大 ,则分子器件的低偏压电导 G 反而变大. 这表 ( ) 明可以通过适当的控制方式 如改变复合分子组成 、构型等 来修改分子电子器件的低偏压输运性质. 关键词 : 　分子器件 ; 对称势垒模型 ; 电子透射谱 ; 低偏压电导 中图分类号 : 　TN6 　　　文献标识码 : 　A 　　　文章编号 : (2009) Patt ern s of the LowBia s Conduct ance of A Molecular Device ZHAN G Zhenhua ,L I Qiaohua ( Shool of Physics and Electronic Science , Changsha University of Science and Technology , Changsha , Hunan 410114 , China) Ab stract : 　The electronic tunneling process in a molecular device consisting of a comp osite symmetric multiple p otential bar riers in series is modeled by a simplified successive tunneling model . Patterns of the lowbias conductance of a molecule are inferred by the changing p atterns of electronic transmission sp ectra with variations of the width ,height of the barrier ,the distance of the two neighboring barriers ,and the efficient mass of electron . It is found that the lowbias conductance of a molecule decreases remarkably with an increase in either the width or height of a barrier ,instead the lowbias conductance of a molecule increases substantially with an increase in either the distance of the two neighboring barriers or the efficient