Density variations in scanned probe oxidation英文文献.pdfVIP

Applied Surface Science 158 2000 205–216 www.elsevier.nllocateapsusc Density variations in scanned probe oxidation K. Morimoto a , Francesc Perez-Murano b , J.A. Dagata c, ´ a Ad anced Technology Research Laboratory, Matsushita Electric Industrial Co., Ltd., Yagumonakamachi 3-1-1, Moriguchi, Osaka 570-8501, Japan b Departament d’Enginyeria Electronica, Uniersitat Autonoma de Barcelona, Barcelona, E-08193 Bellaterra, Spain ` ` c National Institute of Standards and Technology, Gaithersburg, MD 20899, USA Received 4 October 1999; accepted 21 December 1999 Abstract Total oxide thickness and molar volume ratio for scanned probe microscopy SPM oxide nanostructures are obtained for a wide range of silicon substrates and exposure conditions by high-resolution cross-sectional transmission electron microscopy HR XTEM and atomic force microscopy AFM . Oxide density is shown to be a function of substrate doping and voltage pulse parameters. Dislocations produced by the SPM voltage pulse within the silicon substrate are reported from direct XTEM observation for the first time. These dislocations are completely annealed out at 600C. The dimensional response of SPM oxides to annealing andor mechanical stress imposed by metal deposition are found to be negligible for n-type substrates, but SPM oxide films on p-type substrates are strongly compressed or expanded. This behavior is attributed to the formation of p