Tests of timing properties of silicon photomultipliers CERN硅光电倍增管时序特性的测试.pdfVIP

ARTICLE IN PRESS Nuclear Instruments and Methods in Physics Research A 616 (2010) 38–44 Contents lists available at ScienceDirect Nuclear Instruments and Methods in Physics Research A journal homepage: www.elsevier.co m/locate/nima Tests of timing properties of silicon photomultipliers A. Ronzhin a,, M. Albrow a, K. Byrum b, M. Demarteau a, S. Los a, E. May b, E. Ramberg a, J. Va’vra d, A. Zatserklyaniy c a Fermi National Accelerator Laboratory, Batavia, IL 60510, USA b Argonne National Laboratory, Argonne, IL 60637, USA c University of Puerto Rico, Mayaguez, PR 00681, USA d SLAC National Accelerator Laboratory, Stanford, CA, USA a r t i c l e i n f o a b s t r a c t Article history: Timing measurements of Silicon Photomultipliers (SiPM) [1,2] at the picosecond level were performed Received 19 November 2009 at Fermilab. The core timing resolution of the electronic measurement technique is approximately 2 ps. Received in revised form The single photoelectron time resolution (SPTR) was measured for the signals coming from the SiPM’s. 5 February 2010 A SPTR of about one hundred picoseconds was obtained for SiPM’s illuminated by laser pulses. The Accepted 7 February 2010 dependence of the SPTR on applied bias voltage and on the wavelength of the light was measured. A Available online 22 February 2010 simple model is proposed to explain the difference