90纳米cmos工艺下单粒子效应引起的电荷共享研究 word格式.docx

????????儈???????????????к?????????? ??????????????????????н????????????????????????????????Multi-Bit Upset?MBU?????? ??Multi-Node-Upset?MNU?????㊣??л?????????仈?а?????????????????????????????????? ????н???????????????????????? 90 ?㊣ CMOS??????ウ? P+???????STI ????????????????????????ウ???????????????????????????????????????ウ???л?(1) ?? TCAD ??????90 ?㊣ CMOS ????л??? P+????????PMOS ??????????? NMOS ??????н???????? P+?????????? N ?????????? PMOS ??? ???н???(2) ?????????(Shallow Trench Isolation?STI)??????? STI?????????? NMOS ? PMOS ????????????? STI??????? NMOS ?????ф 550nm ????????????, ????????????????н????? PMOS?STI ??????????????????????NMOS ??????????? ????? PMOS ???????????????(3) ?? 3 ? TCAD ??????ウ? 90nm CMOS ????л????н???????????????ウ?????? NMOS ??????┿????????????????? PMOS ????????????? ?????????? ?а?????????????????????? ??????????????????????ウ?????????从?φ?????θ????θ????θ????θ????θP+????θSTI ???ABSTRACTIn radiation environment when high energy ion strikes at semiconductor material charge will deposit along its track and charge sharing effect will occur if multiple sensitive nodes collect the charge. Due to Complementary Metal Oxide Semiconductor (CMOS) scaling trend, charge sharing has been a more and more significant issue of Single Event Effects (SEEs). Charge sharing can trigger Multiple Bit Upset (MBU) and Multiple Node Upset (MNU), which has been a serious problem about reliability in nanometer technologies.In present semiconductor technology, the main physical mechanism of charge sharing has not clearly been found. And there are still intractable difficulties in modeling and hardening of charge sharing. Moreover, the impacts of technology parameters such as concentration and the arrangements of device layout have not been studied. In this thesis, we thoroughly study the influence of P+ deep well doping concentration, the depth of STI and the arrangements of device layout on charge sharing in order to explain the physical mechanisms of the effects o