蓝宝石衬底上化学气相沉积法生长石墨烯-物理化学学报.PDF

物理化学学报(Wuli Huaxue Xuebao) March Acta Phys. -Chim. Sin. 2016, 32 (3), 787-792 787 [Article] doi: 10.3866/PKU.WHXB201512183 蓝宝石衬底上化学气相沉积法生长石墨烯 刘庆彬 蔚 翠 何泽召 王晶晶 李 佳 芦伟立 冯志红* (河北半导体研究所，专用集成电路国家级重点实验室，石家庄050051) 摘要：化学气相沉积(CVD)法是制备大面积、高质量石墨烯材料的主要方法之一，但存在衬底转移和碳固溶 等问题，本文选用蓝宝石衬底弥补了传统CVD 法的不足。利用CVD 法在蓝宝石衬底上生长石墨烯材料，研 究生长温度对石墨烯表面形貌和晶体质量的影响。原子力显微镜(AFM)、光学显微镜(OM)、拉曼光谱和霍尔 测试表明，低温生长有利于保持材料表面的平整度，高温生长有利于提高材料的晶体质量。研究氢气和碳源 对蓝宝石衬底表面刻蚀作用机理，发现氢气对蓝宝石衬底有刻蚀作用，而单纯的碳源不能对衬底产生刻蚀效 果。在1200 °C 下，直径为50 mm 的晶圆级衬底上获得平整度和质量相对较好的石墨烯材料，室温下载流子 2 －1 －1 迁移超过1000 cm ∙V ∙s 。 关键词：石墨烯；蓝宝石；化学气相沉积法；生长温度；刻蚀机理 中图分类号：O646 Epitaxial Graphene on Sapphire Substrate by Chemical Vapor Deposition LIU Qing-Bin YU Cui HE Ze-Zhao WANG Jing-Jing LI Jia LU Wei-Li FENG Zhi-Hong* (National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051, P. R. China) Abstract: Epitaxial graphene by chemical vapor deposition (CVD) is one of the main methods to fabricate high-quality wafer-scale graphene materials. However, CVD-grown graphene on metal substrates has some disadvantages, such as the need for a transfer process and carbon atoms dissolved into the metal substrate. In this work, we evaluate sapphire substrates to overcome those disadvantages. The morphology and crystal quality of the samples grown at different temperatures were characterized by atomic force microscopy (AFM), optical m