hftao高介电绝缘层铁电晶体管的制备与性能分析-preparation and performance analysis of hf tao ferroelectric transistor with high dielectric insulating layer.docxVIP

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hftao高介电绝缘层铁电晶体管的制备与性能分析-preparation and performance analysis of hf tao ferroelectric transistor with high dielectric insulating layer.docx

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hftao高介电绝缘层铁电晶体管的制备与性能分析-preparation and performance analysis of hf tao ferroelectric transistor with high dielectric insulating layer

AbatractWiththeprogressofcommunicationstechnology,peoplehaveaccesstovariouselectronicinformationservices,unhinderedbytimeandspace.Thecoretechnologyofelectronicsystemsisthatofsemiconductordevicessuchasprocessorsandmemories.WiththeHigh-k/MetalGatetechnology,thecurrenttechnologygenerationhasgonebeyond22/20nmnode.However,thecontinuingpursuitofperformanceimprovementsinCMOSdevicesthroughdownsizingisapproachingthelimits,andvariouschallengesatthephysicalandengineeringlevelshavebeenidentified.Asanemergingnon-volatilememory,FeRAMhastheadvantagesoflowpowerconsumptionandfastrandom-access,andhaslongbeencommercializedinfieldssuchasportableelectronicequipmentsandnonvolatilecachememory,sufferingtheproblemoflowdensity.TheFeFET,ontheotherhand,withamuchsmallercellsize,issufferingthevitalproblemofshortretentiontime.WithanHfTaOfilmasinsulator,thefabricatedMFISFETwithPt/SBT/HfTaO/Sigatestructurehasanexcellentretentionproperty.FromtheID-VGScharacteristics,itisobservedthatthememorywindowoftheFeFETis0.9Vandthedrain-currenton/offratioisashighas107.Still,theID-VGScurveremainsalmostthesameafterapplying2×1011pulses.IftheFeFETisprogrammedwiththepulseof10Vand1μs,thedrain-currentsofonandoffstateare10-5Aand10-11A,respectively.Thefabricateddeviceexhibitsexcellentgooddrain-currenton/offratioofabout105aftera24hoursdataretentiontest.Duringtheendurancetest,thememorywindowexhibitsaslightreductionfrom1.1to0.9Vafter2×1011cycles.UndertheguideofpropositionofFeFETNANDFlashROM,thefeasibilityofFeFETNORFlashROMisdiscussed.Afterthat,anovellayout-wiringforthememorycellisproposed,namelydual-bitlinestructure.Withthenewlayout-wiring,theFeDRAMiscapableofsynchronouslyrandomaccessing,andalsocouldbeequippedwitharefreshscheme.TheflexibleprogramminglaysagoodfoundationfortherefreshoftheFeFETcellinanFeDRAM.Thephysical-levelshortretentionproblemiseventuallyovercomebyacircuit-levelsolution.Keywords:FeFET,Retention,FeFETFlash,FeDRAM目录第1章引言11.1目前的主流存储器21.1.1动态随机存储器31.1.2静态随机存储器51.1.3只读存储器51.2阻值转换与非易失性存储器71.3铁电存储器101.3.1铁电材料101.3