gaas phemt材料制备及其双层电阻率测量法的研究-study on preparation of gaas phemt material and its double-layer resistivity measurement method.docx

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2018-06-04 发布于上海
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gaas phemt材料制备及其双层电阻率测量法的研究-study on preparation of gaas phemt material and its double-layer resistivity measurement method.docx

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gaas phemt材料制备及其双层电阻率测量法的研究-study on preparation of gaas phemt material and its double-layer resistivity measurement method

GROWTH OF GaAsPHEMTSTRUCTURE MATERIALS AND MESUREMENT OF TWO-LAYER RESISTIVITYABSTRACTWiththeindustrializationofsemiconductortechnology,GaAsmaterialisusedinpreparationofavarietyofdevicesbecauseofitshighelectronmobility,largebandgap,lowconcentrationof intrinsiccarrier,goodphotoelectriccharacteristics,strongsensitivitytomagneticfieldsandotherexcellentphysicalproperties.Theconcentrationoftwo-dimensionalelectrongas(2DEG)NsandmobilityμnareimportantparametersinPHEMTmaterial.GoodtechnologycontrolandoptimalparameterselectionarekeyfactorsforobtaininghighNsandμn.Theinnovationofmaterialtestingandanalyzingisalsothegoalpursuedbymanyresearchers.Inthispaper,PHEMTmaterialsarefabricatedbyMBE.Bycomparingtheresultsof experiments,westudiedtheeffectsofbarrierlayerthickness,atomicpercentsofAl,spacerlayer thicknessandatomicpercentsofInonNsandμn,andthenthebestparametersforMBEgrowing andbasicstructureofPHEMTweredetermined.Onthisbasis,westudiedtheeffectsofgrowing technologyofheterostructureinterface,dopingratio,dopingconcentrationandchannelstressonNsandμn.Wealsostudiedthetheoryoftwo-layerresistivitytestanduseittoanalyzethegrowthof InGaAschannel.Themainconclusionswegotareasfollows:ThemainparpmetersofPHEMTmaterialarechosenasfollows:spacerthicknessis400?, atomicpercentofAlis22%,barrierthicknessis300?,thicknessofchannellayeris120?,atomicpercentofInis20%,caplayerthicknessis500?,capdopingconcentrationis3×1018cm-3.WiththebasicstructureofPHEMTmaterialparametersdetermined,thedistributionof 2DEGcanbecontrolledandsignificantlyincreased16%bythetechnologyofsmoothingheterostructureinterface.Theresultindicatesthatthetechnologyofsmoothingheterostructureinterfacecaneffectivelyreducethesurfacescatteringandtheresidualimpurityscattering. Increasingdopingconcentrationisconductivetoobtainahigher2DEGconcentration,butwillreducetheitsmobility.Increasingthedopingratio,from3.5:1to4:1,isconductivetoobtainhighermobilityof2DEGinInGaAschannel.TostudytheeffectofstressonInxGa1-xAschannel,wefindthatthehigheratomicpercentof I