不同形貌硫化锑纳米材料的制备分析-preparation and analysis of antimony sulfide nanomaterials with different morphologies.docxVIP

装而成，棒的直径约为 20~350 nm，长约 5~12 μm。相应的电子衍射(ED)表明 组成菜花状纳米棒为单晶结构。进一步实验结果表明，微波辐射和表面活性剂 PEG400 对 菜 花 状 Sb2S3 纳 米 花 超 结构 的 形 成 有 很 重 要 的 作 用 。 紫 外 可 见 (UV-Vis)分析表明，该 Sb2S3 纳米材料带隙能量为 1.90 eV，大于之前的文献报 道。另外我们还探讨了菜花状 Sb2S3 纳米花超结构可能的形成机理。 关键词：纳米材料; 硫化锑；微波；水热法；回流；超结构  Abstract The dissertation focus on exploring new synthetic methods for nanoscaled semiconducting materials Sb2S3, on characterzing microstructures and on studying its growth mechanism and optical properties. It well knows that Sb2S3 is a highly anisotropic semiconductor material and has many applications in elevision cameras with photoconducting targets, electronic and optoelectronic devices, thermoelectric devices, and IR spectroscopy. Tetra-prism-like antimony trisufide (Sb2S3) nanorods were successfully synthesized under hydrothermal conditions. Single-crystalline antimony sulfide (Sb2S3) nanomaterials with flower-like and rod-like morphologies were synthesized under refluxing conditions. Three-dimensional (3D) antimony sulfide (Sb2S3) cauliflower-like superstructures were prepared by the microwave irradiation method. Microstructure, growth mechanism and optical properties of all the synthesized nanostructures were studied and discussed. Tetra-prism-like antimony trisufide (Sb2S3) nanorods were successfully synthesized under hydrothermal conditions by the reaction of antimony trichloride (SbCl3) and sulfur powders (S) with ethylene glycol (EG) as the assistant. The products were characterized by XRD, EDS, SEM, TEM, HRTEM, SAED and UV-Vis techniques. The results show that the well-crystallized and regular- morphology tetra-prism-like Sb2S3 nanorods can be obtained at 180 ℃ for 12 h under hydrothermal conditions. Typically, the as-prepared nanorods are usually 2~5 μm in length, 75~215 nm in width and 50~110 nm in thickness, which exhibits a rectangle cross section, and grow along the [001] direction. The obtained sample is orthorhombic phase Sb2S3 with lattice parameters a=1.126 nm, b=1.128