Si衬底对ZnO薄膜性能影响研究.docVIP

Si衬底对ZnO薄膜性能影响研究 　　摘 要使用脉冲激光沉积(pulsed laser deposition，PLD)技术，采用两种不同纯度(99.5%和99.99%)的ZnO靶材，在p型Si衬底上制备了两种ZnO/Si薄膜.原子力显微镜与X射线衍射分析表明,两种样品具有相似的显微形貌与相同的晶体结构.霍尔效应测试发现，两种ZnO/Si薄膜都展现出了低电阻率、高迁移率的电学性能，但是其导电类型完全相反.研究结果表明，衬底的性能对霍尔效应测试有巨大影响.利用二次离子质谱仪，发现了在低纯度的样品中存在着S杂质向Si衬底中扩散的现象，并直接导致了衬底的导电性能的反型. 　　关键词材料科学，ZnO薄膜，脉冲激光沉积，Si衬底，杂质元素S 　　 　　The impact of Si substrates on the properties of ZnO film 　　 　　ZHOU Jian\|QingZHOU Yong\|NingWU Zi\|JingLU QianWU Xiao\|Jing?k 　　(Department of Materials Science, Fudan University, Shanghai 200433, China) 　　 　　AbstractNative ZnO films were fabricated by pulsed laser deposition with two different kinds of ZnO powder (99.5% and 99.99%). Atomic force microscopy was used to investigate the film morphology and toughness, and X\|ray diffractmetry for characterizing the crystal structures. The results indicated that the two samples had similar morphologies and the same crystal structure. By Hall effect measurements it was found that the two samples exhibited electrical properties of low resistivity and high Hall mobility but of opposite conduction type. Further analyses indicated that the Si substrates played a key role in the measurements of the electrical properties for both samples. A secondary ion mass spectrum measurement of the lower purity ZnO/Si sample showed that S diffused into the Si substrate near the interface, which led to the inversion of the substrate conduction type. 　　Keywordsmaterials science， ZnO films， pulsed laser deposition， Si substrate， impurity element S 　　 　　1 引言 　　 　　具有六角纤锌矿结构的ZnO是一种宽禁带半导体，其禁带宽度为3.37eV，激子束缚能高达??60meV.这些性能使得ZnO材料在光电领域有广泛的应用潜力，近年来受到人们的极大关注.由于ZnO本身的自补偿效应，未掺杂的ZnO薄膜中本征缺陷为施主缺陷，例如Zn间位和O空位，其一般为n型半导体；因此通过各种方法制备p型ZnO薄膜的制备一直是该领域的研究热点［1］. 　　目前已经报道了多种制备ZnO薄膜(包括n型和p型半导体)的方法，如超声喷雾热解(UPS)［1］、化学气相沉积(CVD)［2］、分子束外延(MBE)［3］、金属有机物化学气相沉积(MOCVD)［4］ ，脉冲激光沉积(PLD)［5］，溶胶-凝胶(sol-gel)［6］等.在这些方法中，使用了各种各样不同的衬底，包括Si单晶［7―9］,玻璃［10，11］，Al2O3单晶［12―14］, GaAs单晶［15］,石英［16］，熔融石英［17］以及InP单晶［18］等等，其中Si单晶和 Al2O3单晶使用最为广泛.由于相对于Al2O3来说，Si单晶