薄倍增层apd噪声特性及半导体材料输运特性的研究-光学工程专业论文.docxVIP

华 中 科 技 大 学 硕 士 学 位 论 文 II Abstract Avalanche photodiodes are the detector of choice in many high-speed lightwave system mainly due to their internal optoelectronic gain, this gain is, however, accompanied by excess noise arises from randomness in the coupled avalanching process. Semieonductor material is one of the most useful solid materials, the research of the transport proeess of carrier can help to disclose the microscopic process in semiconductor more deeply and know the material characteristics more clearly. Monte Carlo method has been widely used to study the carrier transport properties of semiconductor devices. It is a statistical probability method, which solves physics problems using statistical numerical theory. Its an effcetive way to simulate the nonlocal transport proporties of semiconductor materials and small size devices. The main content includes the following two parts: The study of noise characteristics of avalanche photodiodes with thin multiplication-regions. The conventional McIntyre carrier multiplication theory for avalanche photodiodes (APDs) does not adequately describe the experimental results obtained from APDs with thin multiplication-regions, incorporating dead space in the model resolves the discrepancy. The dead space is the minimum distance a carrier must travel before acquiring sufficient kinetic energy enabling it toimpact ionize. Recurrence relations in the form of coupled linear integral equations are derived to characterize the underlying avalanche multiplication process. Numerical solutions to the integral equationns are obtained. The ionization coefficients of enabled carriers that have traveled the dead space are determined as functions of the electric field, within the confines of a single exponential model for each device, independent of multiplication-region width. The model parameters are determined directly from experimental data. The use of these physically based ionization coefficients in the dead-space multiplica