掺杂有机光电子器件的研究-高分子化学与物理专业论文.docxVIP

掺杂有机光电子器件的研究-高分子化学与物理专业论文.docx

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掺杂有机光电子器件的研究-高分子化学与物理专业论文

河北工业大学硕士学位论文 河北工业大学硕士学位论文 BCP/ MoO3/ MoO3: NPB(x: 1)的单极性器件,通过比较不同掺杂浓度器件性能的优劣,得出作为连接层 的最优掺杂比2:1。 关键词:OLED,碳酸锂,PTCDA,N 型掺杂,反转底发射 OLED,叠层 OLED v 掺杂有机光电子器件的研究 掺杂有机光电子器件的研究 Research on Doped Organic Optoelectronic Devices ABSTRACT Organic light-emitting diode (OLED) is becoming mainstream technology of green lighting and flat panel display. But there are still many problems to be solved, such as: lowing electron injection, lowing intrinsic carrier concentration and lowing conductivity. The IBOLED can be better used in the AMOLED, However the capacity that electron from the indium tin oxide (ITO) injection to the organic functional layer and the transmission is weaker than conventional OLED. Therefore improving the electron injection and transmission capability has becoming a vital role for fabricating low-voltage, high efficiency OLED or IBOLED. In this letter, 3, 4, 9, 10, perylenetetracarboxylic dianhydride (PTCDA) was be used as doping matrix, and Lithium carbonate (Li2CO3) was be used as n-type dopant. PTCDA compared with traditional n-type materials bathocuproin (BCP) and 4, 7-diphenyl-1, 10-phenanthroline (Bphen) has low prices, thermal stability and easily fabricated. In the research work, we found that Li2CO3 will decompose into Li2O and O2 when it is in the process of thermal evaporation under the ultra-high vacuum. Li2O can be reduced to Li and O2 by Al cathode in thermal evaporation, and Li atom can dope with PTCDA. We optimized the doping concentration, and fabricated the bottom emission organic light-emitting devices used the eight hydroxyquinoline aluminum (8-quinolinolato aluminum, AlQ3) as the emitting layer. They have lower voltage, higher brightness and considerable efficiency than the device with Li2CO3: BCP, LiF/Al. Based on indium tin oxide (ITO) as a transparent cathode and aluminum (Al) as the anode, we fabricate the inverted bottom-emission organic light emitting device that can be better fit to the a-Si TFT drive-circuit. In this letter we us

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