槽栅倒掺杂MOSFET的分析-微电子学与固体电子学专业论文.docxVIP

槽栅 槽栅倒掺杂 MOSFET 的研究 I IV Poissons equation, super steep retrograde channel and linear variation doping retrograde channel models are set up respectively, then the equations on the surface potential and drain current can be obtained. The model gives the influence of doping profile sharpness on the drain current, saturated drive current, and surface potential. It is infered that adopting retrograde channel takes advantages on restraining short channel effect of short channel devices. The influence of the parasitic resistance on the MOSFETs performance cannot be neglected, because parasitic resistance cant be reduced by the scaling down of MOSFETs. To more actually analyze performance of grooved gate MOSFET with a retrograde channel, we study its source and drain parasitic resistance, and analyze the influence of parasitic resistance by changing parameters, in order to better practice device design and improve device performances. In the process of parasitic resistance anlysis, first the parasitic resistance model of conventional MOSFETs is introduced, then bases on above the design is improved, and the parasitic resistance model of grooved gate MOSFET with a retrograde channel is introduced. In the condition of different concave corner, length and width of souce and drain, this paper calculates changes in the source and drain parasitic resistance of grooved gate MOSFET with a retrograde channel, then compares the advantages and disadvantages of parameters, and finally obtains optimal value, to improve the performance of the devices. Key Words: Grooved gate, MOSFET, Retrograde, Threshold voltage, Parasitic resistance 独创性声明 本人声明所呈交的学位论文是本人在导师指导下进行的锈究工作及取得的 价究成果.据我所知，除了文中特别加以你 注和款制的地方外，论文中不包含 其 他人已经阴阳的研究成果，也不包含为翩 翩皮大号 或其他教育机构 的学位或证书而使用过的材料.与我-间 工作的同志对本研究所做的任何贡献均 已在论文中作了明确的说明并表示谢怠. 学位以作者签名:杨款淋 签字臼期: 2010 年 r 月 (0 日 学位论文版权使用授权书 州立论文作者完全了解 岳锻炼 有关保留.使用学位论文的规定， 有权保留并向回家有关部门或机构送交论文约复印件和磁盘，允许论文被蜜阅和 的阅.本人授权E辛德熠 以将学位论文的全部或你分内容编入有关州路进行 恰余.可以采用影 fp .缩印成扫描邻炙制 手段保市汇编学位论文. .dvJ泛