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Abstract
Abstract
The rapid development of microwave communication technologies requires the
microwave dielectric materials with better dielectric properties. Bi-base pyrochlores
material bismuth magnesium niobium Bi Mg Nb O (BMN) has a tunability
1.5 1.0 1.5 7
property. It can be applied in the varactor integrating with microwave circuit due to its
filed-dependent dielectric constant. BMN thin films have good temperature stability as
non-ferroelectric. BMN thin films show low loss, moderate dielectric constant and good
tunability potential as a potential material in microwave region.
In this work we prepared BMN thin films on Pt/Ti/Al O substrate by rf magnetron
2 3
sputtering and studied the influence of substrate temperature,sputtering power, gas
ambience and total pressure on the structure,crystallization, surface morphology and
dielectric properties of the BMN thin films. The major conclusions are as follows ：
The crystallization and dielectric properties of BMN thin films improve with
substrate temperature in a range of 500℃ to 700 ℃. The BMN thin films deposited with
low sputtering power has a lower breakdown voltage and worse dielectric properties
than the ones deposited with high sputtering power. The O :Ar ratio in gas ambience
2
doesn’t have obvious influenc
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