超高温BaTiO3复合材料铁电机理研究-电子科学与技术;微电子与固体电子学专业论文.docx

超高温BaTiO3复合材料铁电机理研究-电子科学与技术;微电子与固体电子学专业论文.docx

超高温BaTiO3复合材料铁电机理研究-电子科学与技术;微电子与固体电子学专业论文

独创性声明 例m仰mm酬J ·,u/4479 本人声明所提交的学位论文是本人在导师指导下进行的研究工作和取得的 研究成果,除了文中特别加以标注和致谢之处外,论文中不包含其他人已经发表 zz;:1251?戚撰写过的研究成果,也不包含为我得天津大学或其他教育机构的学位或证 zz;:1251? 作的同阳研究所做的任何贡献均已在论文中 J喂4立名 签 者 作 J喂 4立 名 签 者 作 文 论 位 学 / 学位论文版权使用授权书 本学位论文作者完全了解天津大学有关保留、使用学位论文的规定。 特授权天津大学可以将学位论文的全部或部分内容编入有关数据库进行检 索,井采用影印、缩印或扫描等复制手段保碎、汇编以供查阅和借阅。同意学校 向国家有关部门戚机构送交论文的复印件和磁盘。 (保密的学位论文在解密后适用本授权说明) ‘,唱 噜飞 ‘,唱 噜 飞 ‘. 也电 /签字日期 : 2 (1/0 年 /月3 日 /  口μ飞/同 口μ 飞/ 同川 年 叫 期 口M 字 签 ,1a -- , 1 Fr ABSTRACT Multilayer ceramic capacitOrs (MLCC) are impOrtant fundamental cOmponents Of electronic infOrmatiOn t配hnOlogy. To meet the r,叫uirements of the develOpment of electrOnic system,MLCC 但毡 d velOping tOwards wide temperaωre ,large capacitance and lOw cOst. BaTi03b拙ed ferroelectric ceramics are One of the impOrtant materials ‘Of MLCC.ηle preparati On of temperature-stable high dielectric cOnstant ceramics sintered at medium tempera阳re were researched in this dissertatiOn,of which the ‘ principles and micromechanism was researched by mOdem methods such as XRD, 电 SEM,.TEM,EDS On the basis Of crystal structure. 1.ηle Pb(Tio.ssSI1o.4s)03 additives can shift the Curie tempera阳re Of BaTi03 tO 1500 C. Pb2+ substitutes fOr A-site and Sn4+ substitutes fOr B-site in AB03 structure, causing the cOnstituent phase 位ansition diffusiOn,so the Curie tempera阳re was shiftedωhigher temperature. AccOrding to TEM,XRJ), Pb(Tio.5sSI1o.4s)03 and BaTi03can fOrm partial sOli? sOlutiOn,and cOre-shell structure was Observ以1. Due ω the mutual effì田t between the cOre and shell,the temperature characteristics Of the capacitanω Of 由e system were improved. Doped with Pb(啊。.55Sno.4S)03 ,the nOnfeηoelec创c phase TIo卢110.902 Ti9017 TiO w制 decreased. It is calculated by XRD analysis that c/a ratiO in 由e sample with additiOn Of Pb(Tlo.55Sno.4s)03 was increased, and the vOlume Of C可stal cell was decreased,which implied the enhancement Of self-pOlarizatiOn in 由e system,sO arising the augment Of dielectric cOnstant The bigger th

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