复合多晶硅栅LDDMOSFET的静态特性及截止频率分析-电路与系统专业论文.docx

摘要 摘要 摘要 近十年来，射频电路的研究得到了巨大的发展，在无线通信、医疗、遥感、 全球定位和射频识别等领域得到广泛应用，电路的工作频率也迅速提升，对半导 体器件频率特性的要求愈来愈高。近年不断有报道指出，SiGe、SiC 等半导体材 料或者 SOI 等新结构制作成的 MOSFET 能达到上百 G 的频率，在高频、高温、大 功率领域显示出一定的优势，但是这些技术必须建立在先进、复杂工艺制造的基 础上，限制了它们的普遍应用。 目前，硅基 CMOS 工艺技术仍是微电子的主流。本文介绍的复合多晶硅栅 （Double Doping Polysilicon Gate , DDPG）LDD MOSFET 采用纯硅基材料，通 过对栅的设计，得到性能优异的新结构射频 MOSFET。所设计的栅有 S-gate 和 D-gate 两块并列组成，S-gate 用高功函数 p 多晶硅，D-gate 用低功函数 n 多晶 硅。靠源端的阈值电压稍高于漏端的阈值电压，表面电势的阶梯式分布屏蔽了漏 端电势的影响，电场沿沟道有一个峰值，载流子呈现更大的平均漂移速度，其结 果提高了驱动电流、跨导和截止频率。 论文首先对半导体产业的发展进行了介绍，分析了器件特征尺寸的减小带来 的挑战和器件结构的改进等等，其次介绍了复合多晶硅栅 LDD MOSFET 的结构设 计，接着采用等效电路模型对小信号特性进行了详细的分析，并给出了电场、电 势、阈值电压和截止频率的解析表达式，最后，运用 MEDICI 模拟软件分析了栅 长、栅氧化层厚度、源漏区结深、栅极掺杂浓度、衬底掺杂浓度、温度等关键参 数的影响，并与相同条件下 p 型单掺杂多晶硅栅（p+ Single Doping Polysilicon Gate， P-SDPG ）MOSFET 的频率特性进行了比较，进一步探讨了改善 MOSFET 性能的途径。 关键词：复合多晶硅栅；等效电路；栅极掺杂浓度；阈值电压；截止频率； I 复合多晶硅栅 复合多晶硅栅 LDDMOSFET 的静态特性及截止频率研究 Abstract Over the past decade, RF circuit research had developed greatly which widely applied in wireless communication, medical treatment, remote viewing, global positioning and radio frequency identification. The working frequency of circuit quickly raised, and the requirements of high frequency characteristics for semiconductor devices had become much highed. In recent years, it is unceasing reported that the frequency of the MOSFETs which are made up of semiconductor material such as SiGe, SiC or SOI new structure can reach some hundreds GHz ,and show certain advantages in high frequency high temperature and high power field. But, these techniques must be based on advanced and complex manufacturing technology, so their application will be limited commonly. Nowadays, silicon CMOS technology is still the trend of microelectronics. The proposed double doping polysilicon gate(DDPG) LDD MOSFET using pure silicon whose gate have been designed is considered as a new RF structure having excellent performance . The gates consist of S-gate with high workfunction p+ polysilicon and D-gate with low workfunction n+ polysilico