蓝宝石低能离子束刻蚀纳米微结构及光学性能研究-测试计量技术及仪器专业论文.docxVIP

优秀毕业论文 精品参考文献资料 研究生优秀毕业论文 Sapphire Sapphire Low Energy Ion Beam Etching Nanometer Structure and optical property Discipline：MeaLsurement T1echniquse and Measuring Instmments s圳entsignature：畅加哌 Supervisor Signature：乙级优 谢铆 Abstract Nanometer matenal has many excellent characteristics． With the development of technology，the潞earch of nanometer material has become deeper all over the world．Thus the deVeIoPment of nanometer material received high speed．The field of this article research tne 10w ene唧10n beam etching technique which form nanostructures the objects， 8urtaces·The etching target of this article is sapphire crystal．The reason of choosing sapphire c巧stal the target is that sapphire crystal has been used into many fields including optics， cneml8try，8nd machinery·Moreover，nowadays it is the essential material of military optoelectronic devices． In experimental 8tudies microwave cyclotron resonance ion source is selected as the research device·The incident energy and incident angle of etching，etching time and ion be锄 撇the research variables to etching sapphire crystal samples．After etching sapphire．there are tnree paramete璐was measured．The first parameter is surface rouglllless which was measured with the’I’ayJor Sure CCl2000 non—contact surface measuring instrument．The second aspect is the measurement of transmissivity with the spectrophotometer．The third aspect is the measurement of surface nanostructure with the Bruker’s Multimode8 atomic force microscope． Based the comparison and analysis of the three parameters，draw the following 1)Under the same c。nditi。ns。f etching time，i。n beam，etching an91e，the tmsmittance is increased along with t。the increase。f the incident energy，but the su如ce nan。meter stmcture was not effected． 万方数据 2)Under 2)Under the circumstances of same incident energy，ion beam，etching angle and different etching time from time 60 min to 1 20 min，the roughhess and transmittance of etched sapphire crystal have slight increase．Mor