nc-SiHc-Si硅异质结太阳电池中本征硅薄膜钝化层的优化-ResearchGate.PDF

See discussions, stats, and author profiles for this publication at: /publication/279865543 Optimization of Intrinsic Silicon Passivation Layers in nc-Si:H/c-Si Silicon Heterojunction Solar Cells Article  in  ACTA PHYSICO-CHIMICA SINICA · June 2015 DOI: 10.3866/PKU.WHXB201504142 CITATIONS READS 0 23 7 authors, including: Hui Liu Stanford University 55 PUBLICATIONS   308 CITATIONS    SEE PROFILE Some of the authors of this publication are also working on these related projects: image processing and computer graphics View project All content following this page was uploaded by Hui Liu on 08 January 2018. The user has requested enhancement of the downloaded file. 物理化学学报(WuliHuaxueXuebao) June ActaPhys. -Chim.Sin.2015,31(6),1207-1214 1207 [Article] doi:10.3866/PKU.WHXB201504142 nc-Si:H/c-Si硅异质结太阳电池中本征硅薄膜钝化层的优化 乔 治1,2 解新建1 薛俊明3 刘 辉1 梁李敏1 郝秋艳1 刘彩池1,* 1 2 ( 河北工业大学光电功能晶体材料河北省工程实验室, 天津300130; 石家庄铁道大学数理系应用 3 物理研究所, 石家庄050043; 河北汉盛光电科技有限公司, 河北衡水053000) 摘要: 采用射频等离子体增强化学气相沉积(RF-PECVD)法在低温、低功率的条件下制备了一系列本征硅薄 膜,研究了硅烷浓度(C )对薄膜微结构、光电特性及表面钝化性能的影响.将本征硅薄膜作为钝化层应用到氢 S 化纳米晶硅/晶硅(nc-Si:H/c-Si)硅异质结(SHJ)太阳电池中,研究了硅烷浓度和薄膜厚度对电池性能的影响.实 验发现: 随着硅烷浓度的降低,本征硅薄膜的晶化率、氢含量、结构因子、光学带隙和光敏性等都在过渡区急剧 变化;本征硅薄膜的钝化性能由薄膜的氢含量及氢的成键方式决定.靠