MB85R1002ANC-GE1;中文规格书,Datasheet资料.pdf

FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-1v0-E Memory FRAM 1 M Bit (64 K × 16) MB85R1002A ■ DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R1002A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R1002A can be used for 1010 read/write operations, which is a significant 2 improvement over the number of read and write operations supported by Flash memory and E PROM. The MB85R1002A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM. ■ FEATURES • Bit configuration : 65,536 words × 16 bits • Read/write endurance : 1010 times • Operating power supply voltage : 3.0 V to 3.6 V • Operating temperature range : − 40 °C to + 85 °C • Data retention : 10 years ( + 55 °C) • LB and UB data byte control • Package : 48-pin plastic TSOP (1) Copyright©2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved 2011.7 / MB85R1002A ■ PIN ASSIGNMENTS (TOP VIEW) A15 1 48 NC A14 2 47 NC A13 3 46 VSS