硅和磷化铟基磁电阻器件的研究-凝聚态物理专业论文.docxVIP

三峡大学硕士学位论文 三 峡 大 学 硕 士 学 位 论 文 PAGE IV万方数据 PAGE IV 万方数据 Abstract Recently, study of semiconductor-based magnetoresistance(MR) device has attracted much attention, because of the semiconductor-based magnetoresistance device has academic significances and application potentials in development of electronic components of highly integrated. In this thesis, we mainly studied the MR effect of non-magnetic single-crystalline silicon and indium phosphide materials. Firstly, the effect of diode on silicon-based magnetoresistance device performances is discussed with three different assisted ways. The optimal diode-assisted way has been found and the corresponding advantage mechanism has been analyzed. It is found that the magnetoresistance performance of the devices is controlled by diode with changing the path of the carrier and the hall effect. Magnetoresistance value of the device depends on the leakage current of diode. Magnetoresistance value of the device not only increases with length/width but also increases with width. Then we have manufactured a diode-assisted silicon-based magnetoresistance (MR) device with silicon oxide on the interface and the influence of interface silicon oxide on magnetoresistance is studied. It is found that the introduction of the silicon oxide effectively enhanced the MR effect. The MR can be achieved to about 527% at 1.2 T at room temperature, which increased nearly 76% relative to the samples without silicon oxide layer. I-V measurement for the samples without magnetic field showed the interface contact resistance was increased remarkably with the insert of silicon oxide, which led to the increase of the MR accordingly. Finally, we have manufactured a diode-assisted InP-based MR device. A large MR effect is investigated in Fe-doped InP devices with a assistant diode by nonlocal four-probe measurement at the room temperature. The large MR effect is significantly enhanced compared to the conventional InP device, which should be attribute