光刻中激光线宽影响及分辨率增强技术的-物理电子学专业论文.docxVIP

广东工业大学硕士学位论文 Abstract The technology of protection lithography has been developed rapidly to meet demands of Grand Scale Integration which characteristic size is getting smaller and smaller. Core of this technology is improve lithographic resolution. Lithography resolution refers to the minimum characteristic size of expose on 由e surface of silicon chip by lithography machine and it is 由e most impo此缸1t performance index of lithography machine. One of the other important index of lithography system is DOF 伽时 is the maximum defocus range of silicon chip which one can satis命 lithographic resolution and uniformity. η1e paper decribes the methods use for modeling of the impact of laser line-width on the lithographic process iil order to against projection lens ma:terials single selection bring about chromatic aberration and adverse effect to Lithographic performance in present lithographic study.ηle chromatic aberrations of an imaging lens combined with real laser spectra 缸e used to include the impact of laser line-width into the lithograghic simulation model .Using PROLITH simulation soft飞;vare investigated the e的ct of linewidth on depth of focus，aerial image critical dimensions ，and expos町e latitude. Simulation results show 曲创 the impact of the line-width is lithography process dependent.In general，increased laser line-width decreases the aerial image. Larger line-width can also result in the loss of exposure latitude. Detailed introduces a method and 由eoηof compress laser linewidth and using it into experiment of XeF laser line-width compression ，finally obtain ideal experimenta1 results. NowadaY$ ，characteristic size of integrated circuits is close to the theoretical resolution boundary of expos田e system in lithography. There have imaged significant aberration on the surface of silicon chip after lithography and leading to serious decline quality of lithography p州ems. Faced with this challenge，intraindustry put forward a series re