光电材料的椭偏光谱和电光性质的研究-凝聚态物理专业论文.docxVIP

也有一定的影响。5． 也有一定的影响。 5． 研究了BaTiOH／SrTiOa／BaTi03和SrTiO型rBaTiOa／BaTi03多层薄膜的光 学性质。分析了每层的厚度以及光学常数，以及综合的整体多层薄膜的光学性 质。说明了椭偏分析对于多层的薄膜是很有效的。 6． 利用调制式的椭偏仪的透射测量的方法，测量分析了掺镧锆钛酸铅 (PLZT)透明薄膜的电光系数。首先利用反射椭偏测量的方法得到PM叮薄膜 的折射率和薄膜的厚度，然后再利用薄膜的透射在线测量的功能，得到薄膜在 加了直流电场后折射率的变化，PLZT薄膜在加了电场后具有克尔电光效应， 我们根据以上测量得到的数据计算得到PLZT的电光系数。调制式的椭偏仪灵 敏度非常高，很适合薄膜材料的电光系数的测量。 关键词：椭偏光谱，光学常数，电光系数，非晶碳薄膜，PbZr03薄膜，InN薄 膜，PLZT薄膜 Ⅱ Spectroscopic Spectroscopic Ellipsometry and electronic-optics Studies of optics-electro materials Major：Condensed Matter Physics Name：Li Fang Supervisor：Mo Dang Abstract In this paper,reflection and transmission spectroscopic ellipsomctry(SE)are given．The optical constant spectra and thickness of several optoelectronic materials were measured and analyzed by applying reflection spectroscopic ellipsometry,and nlgasure the element of material；The electric-optic index of thin film WaS measured by transmission SE，and get formula of electric-optic index．In SE technology,the constant spectra and the electrio-optie index of thin film we]re get by measuring the cbange of phase and amplitude，then fating by theory model．Apart from SE measurement，combining with other analysis tools，such as X—ray diffraction(XRD)， Raman spectra，atom force micrograph(AFM)et a1．， Concretely,the main contents of this paper ate given as follows： 1．The history and applying of SE technology arc given；principle of SE measurement and optical model are introduced too；working principle of two ellipsometry equipment ate given． 2．SE has been used to investigate optical properties of amorphous C film，the sp3 bonding and the sp2 bonding were analyzed too．The amorphous carbon films were prepared using a magnetic field filtered carbon ion deposition method。 Different sp2C and sp’C element amorphous carbon films were obtained through changing the voltage on the Si(100)substrate．Forouhi and Bloomer model and HI Bruggeman Bruggeman EMA model wele used to analyze the optical properties and thinknesses of amorphous C thin films；sp2C and