数字电路设计课件-第9讲-互连.pptVIP

互连 9.3电阻效应的影响 We have already learned how to drive RC interconnect Impact of resistance is commonly seen in power supply distribution: IR drop Voltage variations Power supply is distributed to minimize the IR drop and the change in current due to switching of gates 9.3.1 RI Introduced Noise V DD - △ V M 1 X I R 9 R f pre V DD I V △ V △ 电源/地分布 使用第三层金属走电源/地 (EV4) 在EV4设计中，增加了又厚又宽的第三层金属线 Power supplied from two sides of the die via 3rd metal layer 2nd metal layer used to form power grid 90% of 3rd metal layer used for power/clock routing Metal 3 Metal 2 Metal 1 Courtesy Compaq 4层金属方法 (EV5)－3,4层用于电源/地的走线 4th “coarse and thick” metal layer added to the technology for EV5 design Power supplied from four sides of the die Grid strapping done all in coarse metal 90% of 3rd and 4th metals used for power/clock routing Metal 3 Metal 2 Metal 1 Metal 4 Courtesy Compaq 2 reference plane metal layers added to the technology for EV6 design Solid planes dedicated to Vdd/Vss Significantly lowers resistance of grid Lowers on-chip inductance 6 层金属方法 – EV6 Metal 4 Metal 2 Metal 1 RP2/Vdd RP1/Vss Metal 3 Courtesy Compaq 电阻与功耗分布问题 Source: Cadence Requires fast and accurate peak current prediction Heavily influenced by packaging technology Before After 9.3.2 Electromigration (1) 电迁移 Electromigration (2) 电迁移的发生率取决于温度、晶体结构和平均电流密度。其中在设计中，只有平均电流密度可控。通常使电流保持在低于0.5~1mA/um可以防止电迁移。 9.3.3 Resistivity and Performance Diffused signal propagation Delay ~ L2 CN-1 CN C2 R1 R2 C1 Tr Vin RN-1 RN The distributed rc-line The Global Wire Problem Challenges 精确的同步和正确的操作 设计技术 新互连材料 插入中继器 优化互连结构 Interconnect ProjectionsLow-k dielectrics Both delay and power are reduced by dropping interconnect capacitance Types of low-k materials include: inorganic (SiO2), organic (Polyimides) and aerogels (ultra low-k) e Interconnect Projections: Copper Copper is planned in full sub-0.25 mm process flows and large-scale designs (IBM, Motorola, IEDM97) With cladding and other effects, Cu ~ 2.2 mW-cm vs. 3.5