脉冲磁过滤阴极弧等离子体沉积设备的研制及基片台悬浮电位的研究-等离子体物理专业毕业论文.docxVIP

大连理工大学硕士论文 大连理工大学硕士论文 摘要 摘要 脉冲磁过滤阴极弧等离子体沉积由于能很好地过滤液滴，沉积几乎 所有金属及其合金薄膜材料，尤其能沉积极有应用前景的类金刚石膜及 用于微电子工业的铜内连材料，日益受到重视。 本文首先阐述了真空镀膜的种类及方法，介绍了阴极弧沉积的原理 及优缺点，总结了克服缺点的方法，从而引出过滤式阴极弧的种类及基 本原理。在此基础上确定本课题的研究内容。 介绍了脉冲磁过滤阴极弧的系统组成、设计和调试，并详细介绍了 调试中碰到的各种具体问题及其分析解决过程及方法。 在研究过程中发现引弧电流脉冲宽度受放电状态的影响很大，在不 引燃主弧时脉宽只有759s，而在引燃主弧并在加磁场的情况下会增大到 300p．s。 在实验过程中还发现弧源不同的接地方式对基片台悬浮电位有很 大的影响。在典型的放电条件下，当阳极接地时，基片台悬浮电位最高 达．60V，而当阴极接地或弧源悬浮时，该电位通常只有一IOV左右。分 析了这种现象产生的原因以及不同接地方式对沉积薄膜的影响，即当弧 源接地状态不同时，要获得相似的沉积条件，给基片台施加的负偏压应 有所不同。 最后介绍了用本实验装置制备碳膜，并对其进行了分析测试。碳膜表 面非常平整，基本没有大颗粒。结果表明本实验装置设计成功，基本达 到应用要求。 关键词： 脉冲、磁过滤、阴极弧、悬浮电位、偏压、Langmuir探针 大连理工大学硕士论文 大连理工大学硕士论文 A b st r a ct Abstract Pulsed，Filtered Cathode Arc Plasma Deposition(PFCAPD)is a new deposition technology for a range of metals and compounds films free of the microdroplets associated with conventional arc evaporation，and it seems as one of the best methods to deposition hydrogen—free diamond like carbon which has widespread applications for its unique properties． In this paper，it was introduced of the system designing，debugging and optimizing．The substrate saturation ion current and fiIm deposition rate were measured and ion efficiency was obtained． Some new phenomenons were discovered．The width of trigger current changes with the discharge condition，it is only l OOgs when let the trigger source work alone，but it can rise up to 300p．s with the arc current and magnetic field． It was found that the substrate floating potential changes a lot when the grounded state of arc source changed，Under typical discharge condition，the substrate floating potential is-5V as the arc source is floated to the ground，but drops to一60V in the case of the anode being grounded．In order to obtain similar deposition condition，very different bias must be applied to the substrate when the grounding of the arc source is different． At last，carbon films were deposited and their properties were measured。The films