扩散硅压力传感器的温漂及补偿-电子与通信工程专业论文.docxVIP

求，对已封装好的扩散硅传感器进行了零点及灵敏度的温度补偿，并设计出了 求，对已封装好的扩散硅传感器进行了零点及灵敏度的温度补偿，并设计出了 简化的快速补偿法，取得了良好的补偿效果。最后，总结利弊，提出了对温度 补偿的一些意见与研究探讨。 关键词压力传感器；扩散硅：零点温度漂移；灵敏度温度漂移；温度补 偿 AbstractThe Abstract The diffuse silicon press sensor is rapidly deveIoped in last 30 years． 工t is made according to the method of the piezoresistivity of silicon．Due to its sensitivity，high accuracy，long term stability，easy to miniaturization etc．It is wildly used in petroleum，chemical and metallurgical，power industry etc． It used for detection process fluid(1iquid， ste alll， gas) pressure， different pressure，absolutely Dressure， level． But since the temperature effect of semiconductor， the performance of silicon sensor is also changed by temperature． Because we can’t produce a sensor without temperature drift， so。 temperature compensation is a crucial technical probleⅢin the research and production of pressure silicon sensor． There is a wheatstone bridge in the silicon diaphragm， each part of the bridge is a piezoresistance．when sil icon diaphragm is strained by the pressure 4 resistances changed，and also the output．We hope this 4 resistances are equal and only changed by pressure． But in f8ct， they also can be changed by temperature and other effects． Temperature change can lead a lot of factor cha力ges：Semiconductor electronic she】l densj t y， the passjvation me用brane Dressure of silicon， the volume of silicon oil，and the stress of is01ation diaphragm a11 of them can occur change．But the additional influence can be reflected eventually through the change of 4 bridge resistances， that so， we study only，carry out temperature co伍pensation for bridge，have also solved the temperature compensation problem of pressure sensor． The te皿perature drift of silicon pressure sensor divides into the zero te皿perature drift and sensitivity temperature drift．The temperature drift of zero point is mainly because of the temDerature effect of the resistance． Sensitivity