六方结构纳米氮化铝粉末的低温合成及物相表征-电路与系统专业论文.docxVIP

abstractSynthesis abstract Synthesis and the Nature of Hexagonal nano-Aluminum Nitride powder at Low-temperature Subject：Circuit and System Tutor：Prof．Gao Yong Signature： 勿彬 Student：Shang Chao Signature： §缈迎Q№ ， ．∥ 7， Associate Prof．Lv Huimin Signature： ．厶驴夕缸¨-，，似 Abstract The rapid development of modem technology is demanding materials with higher qualities．AIN ceramics will be widely used in many high·teeh because of its remarkable properties，such high thermal conductivity，high electrical resistivity，low dielectric constant and dielectric loss,no toxicity，∞well as low thermal expansion coefficient close to that of silicon．While commercial degree of A1N is not high today．The main factors that delay the further development of A1N are its high production cost and the difficulties to produce complex shape AIN parts．These problems，including improving reaction conditions， decreasing sythesis temperature and discussed in this paper in order to improve the application and development of AIN ceramics． Many work indicated that optimization of the starting materials is effective way to aceelemte the reaction rate．In this paper，a new complex decomposition reaction is given，AICl3 and NaN，were used to synthesize AIN powder．The XRD shows that the obtained samples at 380C pure hexagonal A1N and the impurity in the samples is lower than the resolution limit of the spectrometers．The peak lies where 20=33．3。． At this temperature A1N nanocrystals begin to produce,but is not very well．The TEM shows that the reticular is about 100rim，and the reticular gets united without regular shape．The XRD and TEM show that AIN synthesized at 450(2 with the same starting materials is pure hexagonal tklN and the peak lies where 20=33．3。too．There is obvious impurity on XRD．The nanocrystals synthesized at this temperature is about 75nm with regular shape and clear sketch．XPS show that there are C、O、N、AI in the surface of the two samples．Of these，C and 0 impurity．Oxygen is introduced because the A1N ret