SnO2-Zn2SnO4系压敏电阻电学性质的分析.pdfVIP

摘要 介电常数出现峰值。所有样品的势垒高度均为0.8eV 左右，这表明，晶粒尺寸的 变化以及 Cr O 在样品中存在的形态是影响 SnO -Zn SnO 系压敏陶瓷电学性质 2 3 2 2 4 的主要原因。 关 键 词：陶瓷；SnO ；压敏电阻；电学非线性；晶界势垒 2 论文类型：[应用基础研究] II 万方数据 摘要 Subject: Investigation on the electrical properties of SnO -Zn SnO varistor system 2 2 4 Specialty: condensed matter physics Name: Lv Benshun Supervisor: Professor Li Liben Associate Professor Zang Guozhong ABSTRACT Since Matsuoka announced the development of ZnO in 1969 ，more thorough and extensive investigations were carried out on this novel varistor material. The applications and theoretical researches of ZnO varistors had been practiced to the end of 1980’s. At the same time, the thermal instability and degradation problem of ZnO varistors have not been resolved because of their multi -phase structure induced by doping more dopants. With the research on the improvement of ZnO electrical properties going on, the thermal instability and degradation problem of ZnO v aristors have not been resolved, so the efforts to search new varistor material have not been interrupted. For examples, Rhodes and Yan in Bell Lab announced a new TiO2 varistor system in 1982, and in 1994, Trontelj and Makarov found the WO3 has nonlinear electrical properties. In successive researches, it was found that TiO2 varistors and