双重图形技术在后端设计中的解决方案.pdfVIP

Abstract AstheVLSI scalesinto of technology 20nm，half this pitch nodeiS most technology32nm，theadvancedimmersionscannercan only maximumhalf support 40hmthusdoesnothave pitch sufficient imaging capability．Extreme at of13．5 ultraviolet(EUV)technologywavelength isconsidereda sourcefor practicallight next——generation lithographic technology．However，beforeEUVl issuitedtomass ithography production， anappropriateexposure isneededtofillthe between technology gap immersionArF andEUVscanners．Double patterning a thatextendsthe usabili ofimmersionArF technology ty system．Notably。 DPTrelaxes theminimumofacircuit pitch foreach layout splitexposure： water—based thus，ArF immersion canbe systems extendedto20nm nodeand isa technologybeyond．DPT that promising techniquebridges the fornext anticipatedtechnologygap