含氧碳化矽以紫外光照射之特性研究.pptVIP

含氧碳化矽以紫外光照射之特性研究 Characterization of and Oxygen Doped Silicon Carbide Filmsafter UV Curing(ThinFilms2010 and COMPO2010 2010年4月1日)黃俊傑　　　　黃肇瑞　　　　 融入課程名稱: 半導體製程 融入課程單元: 介電薄膜 授課教師: 黃俊傑 　Characterization of and Oxygen Doped Silicon Carbide Films after UV Curing -Substrate Temperature Effects Result Conclusion Component Low UV damage in the high -CH3 content. Dielectric constant and leakage current are low at high TMS/CO2 ratio. Curing time: 900sec Environment : He 20torr Result Conclusion Temperature Dielectric constant and leakage current increase after UV exposure. But decrease by curing substrate temperature Curing time: 900sec Environment : He 20torr Result and discussion FTIR Spectra after Different Curing Substrate: Temperature Result and discussion Si-O network, Si-C bending amount increase after UV curing. Si-CH3 and S-H bonds decrease after UV curing. FTIR Spectra after Different Curing Substrate: Temperature Result and discussion Subtraction after UV curing Si(CH3) formed at high temperature curing substrate temp. Si(CH3)3 formed at low curing substrate temperature. FTIR Spectra after Different Curing Substrate: Temperature Result and discussion FTIR Spectra Before Different Curing Substrate: Component Result and discussion Si-O network, Si-C bending amount increase after UV curing. Si-CH3 and S-H bonds decrease after UV curing. FTIR Spectra Before Different Curing Substrate: Component Result and discussion Subtraction after UV curing SiCO film content does not effect film configuration after UV curing . FTIR Spectra after Different Curing Substrate: Temperature Result and discussion Modulus is related to Si-H/Si-O bonds. The modulus increases by curing substrate temperature. Inversely, Si-H/Si-O bonds decrease by curing temperature. Result and discussion SiC and –CH3 Bond Base structure: Si-O bonds are fairly polarizable. Si is bonded to network in 4 directions, so it cannot move much, i.e. group is not ver