《半导体物理学》第27章spin injection into semiconductors.ppt

Schottky barriers spin injection efficiency: 2% (RT) PRL, 87 (2001) 016601 Asymmetry, asymmetry, in forward bias no spin dependence can be seen. Fe/AlGaAs Schottky barrier APL, 80 (2002) 1240 APL, 82 (2003) 4092 Polarization:32% spin injection efficiency:30% little temperature dependence Benefit: high spin injection efficiency (reverse biased) Disadvantage: asymmetry, in forward bias no spin dependence should be seen. It is not feasible to use Schottky barriers in a GMR like injector/detector scheme. When two Schottky barriers are put in series there is no way to opeate both of them in