TFTLCD工艺制程简介.pptxVIP

TFTLCD工艺制程简介第1页/共53页 周刚09-4-19编写Contents 2. 1. 3. Array process Module Process　　Cell Process 第2页/共53页 TFT LCD 客户导向，团结协作 DeptEvery Process is important 天马显示屏无处不在 精益生产，精益管理 Team work第3页/共53页 TFT-LCDCOGRecipeOICSTKODFADI TFT-LCD ENGLISH第4页/共53页 一：Array Process ARRAY生产计划PHOTOWETCVDPVDDRY Organization第5页/共53页 Array Layout第6页/共53页 TFT ARRAY PROCESSCCITO pixel electrodeCross-section C-C’Select lineData lineStorage capacitorCCITO pixel electrodeCross-section C-C’Select lineData lineStorage capacitora-Si TFTTFT Structure第7页/共53页 Deposit and pattern gate metalFunctions:Gate of TFTSelect linesBottom electrode of storage capacitorMetal options:Ti/Al/TiAl/MoCrMoCCCross-section CC’a-Si TFT array process – step 1第8页/共53页 a-Si TFT array process – step 2Deposition of SiN/a-Si/n+ by PECVD, patterning of a-SiSiN is gate dielectric and storage capacitor dielectricSelective etch of a-SiSiN is not etchedCCSiNa-Si/n+第9页/共53页 a-Si TFT array process – step 3Deposition and patterning of source/drain metalFunctions:Source and drain metalData line metalMetal optionsTi/Al/Ti or Ti/AlCrMo or Mo/AlBack etch of n+ a-Si from channel areaCC第10页/共53页 a-Si TFT array process – step 4Deposition and patterning of passivation SiN by PECVDFunction:Passivate TFTCC第11页/共53页 a-Si TFT array process – step 5Deposition and patterning of ITOFunction:Pixel electrodeTop electrode of storage capacitorCCITO pixel electrodeCross-section C-C’Select lineData lineStorage capacitorCCITO pixel electrodeCross-section C-C’Select lineData lineStorage capacitora-Si TFT第12页/共53页 TFT ARRAY PROCESS___PVD/CVDUsed for ITO (Indium Tin Oxide transparent conductor) and for metals (Al, Mo, Cr, etc.)第13页/共53页 DC Sputter depositionSchematic diagram of DC powered sputter deposition equipment(glow discharge)ground-V (DC)VacuumCathode shield~-100-1000VPVD原理第14页/共53页 ACLSLoadlockT/CP/CP/CP/CP/CP/CAKT-5500PECVD (即等离子体增强化学气相沉积) 工作原理:采用等离子辅助对化合物进行催化分解目的: 利用等离子体辅助活化反应气体,降低反应温度,改善薄膜质量第15页/共53页 PECVD原理LayerFeed gasMaterialTe