ZnO纳米棒阵列结构薄膜的制备、表征及性能研究的中期报告.docxVIP

ZnO纳米棒阵列结构薄膜的制备、表征及性能研究的中期报告 摘要： 本中期报告介绍了对ZnO纳米棒阵列结构薄膜的制备、表征及性能研究的进展。采用射频磁控溅射（RFMS）技术在p-Si基底上制备了ZnO纳米棒阵列结构薄膜，并通过场发射扫描电子显微镜（FESEM）、X射线衍射（XRD）和紫外-可见吸收光谱（UV-Vis）对样品进行了表征。结果表明，通过RFMS技术可以制备出ZnO纳米棒阵列结构薄膜，纳米棒的直径约为100 nm，长度为数百纳米，阵列间距可控。经XRD分析，样品为纯ZnO晶体，为wurtzite结构。由于ZnO的电子亲和能和电离能的大小关系，导致p-Si/ZnO异质结形成，其能级分布符合理论预测，为典型的p-n异质结。通过紫外-可见吸收光谱测量，发现ZnO纳米棒阵列结构薄膜的紫外吸收较强，表明其光催化性能优良。 关键词：ZnO纳米棒阵列；射频磁控溅射；p-n异质结；光催化性能 Abstract: This mid-term report introduces the progress of preparation, characterization and performance study of ZnO nanorod array film. The ZnO nanorod array film was prepared on p-Si substrate by radio frequency magnetron sputtering (RFMS) technology, and the samples were characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and ultraviolet-visible absorption spectroscopy (UV-Vis). The results showed that ZnO nanorod array films could be prepared by RFMS technology, with a diameter of about 100 nm, a length of several hundred nanometers, and a controllable array spacing. XRD analysis showed that the sample was a pure ZnO crystal with a wurtzite structure. Due to the relationship between ZnOs electron affinity and ionization energy, p-Si/ZnO heterojunction was formed, and its energy level distribution was in accordance with theoretical predictions, which was a typical p-n heterojunction. The UV-Vis absorption spectroscopy measurement showed that the ZnO nanorod array film had strong ultraviolet absorption, indicating its excellent photocatalytic performance. Keywords: ZnO nanorod array; radio frequency magnetron sputtering; p-n heterojunction; photocatalytic performance.