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UltraFastSiCMOSFETGateDriver
ProjectUpdate
YangLei
Nov11,2013
OutlineTestresultsat800V20Aswitching.Switchinglossanalysisunderdifferentgateresistors.Switchinglossanalysisunderdifferentgateinductance.
Turnonwaveform(Rg_on=0Ω)
Turnoffwaveform(Rg_off=0Ω)
Turnonwaveform(Rg_on=3.9Ω)
Turnoffwaveform(Rg_off=3.9Ω)
Turnonwaveform(Rg_on=10Ω)
Turnoffwaveform(Rg_off=10Ω)
SwitchingWaveformComparisonVariable:RonandRoff.
Gatevoltage(turnonwaveform)Resistorincreases
ResistorincreasesDrain-sourcevoltage(turnonwaveform)
ResistorincreasesDraincurrent(turnonwaveform)
ResistorincreasesPowerloss(turnonwaveform)(V×I)
ResistorincreasesGatevoltage(turnoffwaveform)
ResistorincreasesDrain-sourcevoltage(turnoffwaveform)
ResistorincreasesDraincurrent(turnonwaveform)
ResistorincreasesPowerloss(turnonwaveform)(V×I)
WecangetswitchinglossbyintegratePloss.R_gate/ΩEloss/mJSwitchinglosscomparison
Resistorincreasesdv/dtofgatevoltage(turnonwaveform)
Resistorincreasesdv/dtofdrain-sourcevoltage(turnonwaveform)
di/dtofdraincurrent(turnonwaveform)Resistorincreases
dv/dtofgatevoltage(turnoffwaveform)Resistorincreases
dv/dtofdrain-sourcevoltage(turnoffwaveform)Resistorincreases
di/dtofdraincurrent(turnoffwaveform)Resistorincreases
SwitchingWaveformComparisonVariable:LG.
Gatevoltage(turnonwaveform)Inductanceincreases
Drain-sourcevoltage(turnonwaveform)Inductanceincreases
Draincurrent(turnonwaveform)Inductanceincreases
Powerloss(turnonwaveform)(V×I)Inductanceincreases
Gatevoltage(turnoffwaveform)Inductanceincreases
Drain-sourcevoltage(turnoffwaveform)Inductanceincreases
Draincurrent(turnoffwaveform)Inductanceincreases
Powerloss(turnoffwaveform)(V×I)Inductanceincreases
SwitchinglosscomparisonRG=3.9Ω
SwitchinglosscomparisonRG=0Ω
dv/dtofgatevoltage(turnonwaveform)Inductanceincreases
dv/dtofdrain-source
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