Ruichips-RU3080M宏盛微优势代理6.pdfVIP

RU3080M

N-ChannelAdvancedPowerMOSFET

FeaturesPinDescription

•30V/80A,

RDS(ON)=2.3mΩ(Typ.)@VGS=10V

RDS(ON)=3mΩ(Typ.)@VGS=4.5V

•SuperHighDenseCellDesign

•ReliableandRugged

•100%avalanchetested

PDFN5060

•LeadFreeandGreenDevicesAvailable

(RoHSCompliant)

Applications

•DC/DCConversion

•SwitchingApplication

N-ChannelMOSFET

AbsoluteMaximumRatings

SymbolParameterRatingUnit

CommonRatings(T=25°CUnlessOtherwiseNoted)

C

VDSSDrain-SourceVoltage30

V

VGSSGate-SourceVoltage±20

TJMaximumJunctionTemperature150°C

TSTGStorageTemperatureRange-55to150°C

IDiodeContinuousForwardCurrentT=25°CA

SC50

MountedonLargeHeatSink

IDP300μsPulseDrainCurrentTestedT=25°C②A

C320

①

T=25°C

C