低噪声放大器设计与线性仿践.pptx

MicrowaveOffice2005TrainingLinearSimulation–LowNoiseAmplifier

AWR,Inc.CompanyConfidentialLinearSimulationThedesignofaLowNoiseAmplifier(Hands-onwork)CreatingschematicsDatalibrariesEditingschematicsymbols(addingexplicitgroundnodes)CreatinggraphsAddingmeasurementstothegraphsAdvancedmeasurementsTuningasadesignaid

AWR,Inc.CompanyConfidentialDesignGoalsfora5GHzamplifier:Gain: 10dBNF: 1.2dBStability:UnconditionalatallfrequenciesCreateschematicandnametheschematic‘Device’SelectDevicesuitablefordesignfromthedevicelibrary.UsetheFujitsuFHX35LGdataset.ThiswillimporttheS-ParameterandNoisedataforthedevice.Addsimpleschematic,graphsandmeasurementsAddtheportparametersS11andS22,gainparametersS21andMSGAddthestabilityparametersKandB1,noiseparametersNFandNFminTheDesignofaLowNoiseAmplifier(Handsonwork)

AWR,Inc.CompanyConfidentialTheDesignofaLowNoiseAmplifier(Handsonwork)PlaceFHX35LGHEMTintoschematicAlternatively,youcanimportthedatafilefromtheprojectview(RightclickDataFiles,select“ImportDataFiles”)NOTE:Whenadatafilehasbeenreadintoaprojectitwillbevisibleintheprojecttree.HINT:TheHEMTwillbefoundinthedatalibrary,usetheelementtreeandbrowsetoFujitsuparts.

AWR,Inc.CompanyConfidentialEditthesymboltouseanexplicitgroundnodeNOTE:DoubleclickaschematicsymboltoopentheElementOptionsdialogbox.TheDesignofaLowNoiseAmplifier(Handsonwork)

AWR,Inc.CompanyConfidentialChangethesymboltoaFETsymbolNOTE:Onlysymbolswiththreenodeswillbelisted.TheDesignofaLowNoiseAmplifier(Handsonwork)

AWR,Inc.CompanyConfidentialAddtwoportsandconnectthesetothetransistorHINT:UsetherightmousebuttontorotatethePORTsymbolbeforeplacementintoschematic.TheDesignofaLowNoiseAmplifier(Handsonwork)

AWR,Inc.CompanyConfidentialSetProjectfrequencies0.1GHzto2