微电子技术论文7579563.pdfVIP

IEEETRANSACTIONSONELECTRONDEVICES,VOL.63,NO.11,NOVEMBER20164201

Charge-BasedCompactModelforBias-Dependent

Variabilityof1/fNoiseinMOSFETs

NikolaosMavredakis,NikolaosMakris,PredragHabas,andMatthiasBucher,Member,IEEE

Abstract—Variabilityoflowfrequencynoise(LFN)insquaremicrons.TheLorentzian-likespectraareresponsible

MOSFETsisbias-dependent.Moderate-to-large-sizedtransistorsforstrongLFNdeviationinsmallareadeviceswherenumber

commonlyusedinanalog/RFapplicationsshow1/f-likenoiseoftrapsisquitelow[5],[13].Inlarger-areatransistors,LFN

spectra,resultingfromthesuperpositionofrandomtelegraph

noise.Carriernumberandmobilityfluctuationsareconsideredvariabilityismainlyaffectedbyoperatingconditionsandasit

asthemaincausesofLFN.Whiletheireffectonthebias-willbeshowninthiswork,isconnectedwithcarriernumber

dependenceofLFNhasbeenwellinvestigated,thewaythesefluctuation(N)[8]andmobilityfluctuation(μ)[14],[15]

noisemechanismscontributetothebias-dependenceofvariabilityeffects.1/fnoisevariabilityisminimuminhigh-current

ofLFNhasbeenlesswellunderstood.LFNvariabilityhasregion[16],whileitincreasesasinversionbecomeslower

beenshowntobemaximizedinweakinversion(subthreshold),

whileincreaseddrainbiasalsoincreasesLFNvariability.How-reachingaplateauinweakinversion[17].Finally,thenonuni-

ever,nocompactmodelhasbeenproposedtoexplainthisformityofchannelunderhighdrainbiascauseshighe