微电子学资料MOSFET_parameters_DC.pdfVIP

PowerMOSFETs

DCparametersandstructure

PowerMOSFET

Designerpointofview

CustomerpointofviewGS

D

BVdss

Vth

Ron

GD

Vsd

Qg

S

...

S

D

G

PowerMOSelectricalcharacteristics:BVDSS

Id[A]BreakdownvoltageD

+

250uAMeasureconditions:

•Drain:+bias(N-channeldevices)V

IDSS•SourceGate:ground

G

BVDSS•ID=250uAor1mA

VDS[V]

S

A

Sourcemetal

BV=ƒ(ρ,E)

DSSepithick

Source

Body

k

c