美军相关文档40-45 GHz 16波束控制芯片.pdfVIP

1498IEEEJOURNALOFSOLID-STATECIRCUITS,VOL.44,NO.5,MAY2009

AMillimeter-Wave(40–45GHz)16-Element

Phased-ArrayTransmitterin0.18-mSiGe

BiCMOSTechnology

Kwang-JinKoh,Member,IEEE,JasonW.May,StudentMember,IEEE,andGabrielM.Rebeiz,Fellow,IEEE

Abstract—Thispaperdemonstratesa16-elementphased-arraycapacity[3],[4].Thephased-arraytechniqueisanattractiveso-

transmitterinastandard0.18-mSiGeBiCMOStechnologylutiontocompensateforthesepropagationimpairments,since

forQ-bandsatelliteapplications.Thetransmitterarrayisbasedahighlydirectiveantennaarrayimprovesthesignal-to-noise

ontheAll-RFarchitecturewith4-bitRFphaseshiftersanda

corporate-feednetwork.A1:2activedividerandtwo1:8passiveratio,hencechannelcapacity,significantly.Thehighantenna

tee-junctiondividersconstitutethecorporate-feednetwork,gainalsoenhancesthespatialdiversitysincethephased-array

andthree-dimensionalshieldedtransmission-linesareusedforfiltersthesignalinthespace-timedomainandrejectsaninter-

thepassivedividertominimizearea.Allsignalsareprocessedfererfromadifferentdirectionsubstantially[5].

differentiallyinsidethechipexceptfortheinputandoutputIntermsofscalability,phased-arraysbasedontheAll-RFar-

interfaces.Thephased-arraytransmitterresultsina12.5dBof

averagepowergainperchannelat42.5GHzwitha3-dBgainchitectureandusingRFphaseshifters[6]–[8]haveasimple

bandwidthof39.9–45.6GHz.TheRMSgainvariationis1.3dBsystemarchitectureandr