部分重叠双栅MOSFET器件特性的研究.docVIP

  Device Characteristics Research of the Overlap Double Gate MOSFET# HAN Mingjun1, CHI Xiaoli1, XUE Feng2, KE Daoming1** 5 10 15 20 25 30 35 40 (1. School of Elevtronics and INformation, Anhui University, HeFei 230601; 2. Information and Communication Technology Department,Anhui sanlian college, HeFei 230601) Abstract: In this paper an overlap double gate structure MOSFET model is researched and compared with split double gate structures in this paper. This structure is emulated by MEDICI software. The simulation results show that the channel surface electric field of the overlap double gate structure is modulated. The short channel effect and hot carrier injection is reduced. Breakdown voltage is increased; meanwhile, the equivalent gate capacitance is dropped. Transconductance could be regulated by gate voltage. Along with the channel shorten, threshold voltage change rate of overlap double gate is smallest than the others. Keywords: Overlap double gate; Split double gate; Short channel effect; Gate capacitance; Channel surface electric field 0 Introduction With the development of integrated circuit technology, people are using new material and structures to improve the conventional CMOS process. If the silicon oxide is still used as the gate dielectric, whose thickness is less than 3nm, the gate leakage current caused by quantum tunneling effect increases exponentially with the dielectric thickness decreasing. The weakening of the gate controlling for the channel and the sharply increasing of the gate dielectric leakage current, have a great effect on device’s integration, reliability and life[1][2]. Consequently, the high-K gate dielectric materials are used in study at present, replaced by materials whose dielectric constant higher than silicon oxide’s, making the direct tunneling current between the gate and the channel reduce significantly. The gate dielectric stack method[3] is proposed by someone, only inserting a piece of ultrathin SiO2 buffer layer(0