AnOAl透明导电氧化薄膜制备、物化结构及其光电特性研究.pdfVIP

东北大学硕士论文 摘要 非晶化。掺杂效应是由于A1原了取代了Z.n原子的位置，并提供了自由电了，增加了薄 膜的导电性，降低了电阻率。电磁测量结果表明:ZAO薄膜在紫外区截止，在可见光区的 透射率大于80%，光学禁带宽度在3.3-3.9eV之间。 总而言之，虽然目前ITO仍然是最为重要的透明导电薄膜，但是ZAO薄膜所表现出 的优异的光电特性和其廉价的生产成本表明，在不久的将来，ZAO薄膜会成为透明导电 材料中的主流。 关键词:透明导电薄膜、红外区反射率、光学禁带、电阻率、透射率、掺杂K 1;北大学硕长论文 ABSTRACT ABSTRACT Transparentconductingoxidefilmswasusedassolarcell,transparentelectrode, piezoelectricdevices,liquidcrystal,reflectivewindows,thetrapofultravioletradiationand infrared,andgassensebecauseithaveexcellentopticalandelectricproperties.Thematerialhas hightransmissionandlowresistivities.Especialtransparentconductingmaterialbecomesvery importantininformationtechnologyfields.Itplaysaimportantrole.Inthefabricationofsolar cell,itispopularmaterial.Somanyresearchersbegintoinvestit. Recentlythetransparentconductiveoxidematerialwhichwereextensivelyappliedand studiedincludeSn02、In,O,、Ca2InO4.ZnOanddopedSn02:Sb,SnOZ:F.In20,:Sri (ITO)、ZnO:Al(ZAO)andsoon.Inthesematerial,Inz0,:Sri(ITO)wereappliedbest extensively.Theneedfrom themarkedisbecomingarise.ButITOhavesomemortal shortcoming.TherearenotmuchenoughInintheearth,soitsprizeisveryhigh.Formany years,ZnO:AIhavebeenwidelyusedbecauseitischeapandnontoxic.ZAOalsohavegood opticalelectricandexcellentpiezoelectricproperties.ZAOholdsconsiderablepromiseasan opticaltransparentconductingduetoitswidebandgapabout3.44eV Ithaveverylow resistivityabout10Qcm.andhighlytransparentabove90%.Inaddition,ZAOfilmwitha texturedsurfacehaveattractedinterestasatransparentelectrodeforsolarcellsandhigh chemicalstabilityinhydrogenplasma ZnO:AIfilmhavebeendepositonvarioussubstratebytechniquessuchasdomagnetron sputtering，rfmagnetronsputtering,vacuumevaporation,CVD,sol-gel，Spraypyrolysisand PulsedLaserDeposition.Inthispaper,ThehighqualityZAOfilmswereproducedbydo reactivemagnetronsputteringt