Blue photoluminescence from nanocrystalline porous silicon structure fabricated by high-current pulsed electron beam irradiation.pdfVIP

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2017-08-21 发布于湖北
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Blue photoluminescence from nanocrystalline porous silicon structure fabricated by high-current pulsed electron beam irradiation.pdf

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Blue photoluminescence from nanocrystalline porous silicon structure fabricated by high-current pulsed electron beam irradiation.pdf

Chin．Sci．Bul1．f2014)59(34)：4758—4762 csb．scichina．com DOI10．1007／sl1434—014—0561—6 WWW．springer．com／scp Bluephotoluminescencefrom nan0crystaUineporous silicon structurefabricatedbyhigh-currentpulsedelectron beam irradiation PengLii·Xiao-TongW ang。Sheng—ZhiYang ‘ YanLi·Xiu-LiHou。Qing-FengGuan Received：14April2014／Accepted：5June2014／PuNishedonline：31July2014 @ ScienceChinaPressandSpringer—VerlagBerlinHeidelberg2014 Abstract N—typeSi(11l1wafershavebeenprocessedby nanostructuresby anodicaletching [1]andmany dry high．currentpulsed electron beam (HCPEB)treatment depositionmethodssuchaselectricsprakprocessing 5【]， with an increasing numberofirradiation (1．10 and20 magnetronsputtering 6【]，focusedionbeam (FIB)7【】，and pulses)．Theresultsofthisworkshowthatahighlyporous pulsed1aserablation(PLA)[8]．Duetothebetterpotential nanostructurewasformedafterirradiation．Moreover，the associativitywithSiprocesstechnology，drytechniquesrae high．density Sinanocrystals (Si—ncs)about3nm were regardedasmorecompetentofrfabricatingoptoelectronics distributed on the surface of Siwafers and exhibited andphotovoltaicdevices． 3．O2eV PhotoluminescencefPL1emission inblueband． High—currentpulsedelectronbeam fHCPEB)irradiation ThePL intensityincreaseswiththeincreaseintheSi．ncs’ isanovelsurfacemodificationtechnique。whichprovides density in accordance with the quantum confinement highelectronenergydepositionduringanultrashorttime model，whichcanbeascribedtothedifferentpulsetimeof withnarrow depthsuponthematerialsurfaces 9『1．The HCPEB treatment．Thepossibleformationmechanismsof pulsedelectron irradiation inducestransitoryheating and microporesandSi—ncsarediscussed． coolingonthesurface invacuum and inducesthenano—