碳纳米管复合Bi2Te3温差电材料的电化学制备及其表征.pdfVIP

碳纳米管复合Bi Te 温差电材料的电化学制备及表征 2 3 许 晗，王 为* (天津大学 化工学院 应用化学系，天津300072) 摘 要：采用电化学控电位的方法制备了碳纳米管复合Bi Te 温差电材料薄膜。采用SEM、EDS 2 3 及XRD 等测试方法研究了碳纳米管的加入对薄膜形貌、成分及结构的影响。结果表明，在含有 Bi3+和HTeO + 的硝酸体系中，可通过电沉积的方式制备碳纳米管复合的Bi Te 温差电材料薄膜。 2 2 3 碳纳米管的加入使得Bi Te 温差电薄膜的电沉积更加易于进行，薄膜中Bi 及C 元素的含量随沉 2 3 积电位负移而增加，Bi 的含量随碳纳米管加入而提高。碳纳米管的加入并未对Bi Te 基质的形 2 3 貌产生明显影响，但由于引入新的成核位点而在其表面形成突起。另外，碳纳米管的加入将会使 得Bi Te 薄膜的结晶化程度提高。 2 3 关键词：Bi Te ；温差电材料；电沉积；碳纳米管 2 3 Electrodeposition of MWNTs doped Bi-Te binary thermoelectric films from nitric acid baths Abstract ：MWNTs doped Bi-Te binary films were prepared by potentiostatic electrodeposition technique onto nickel substrate at room temperature. The effect of introduction of MWNTs on the morphology, composition and phases of Bi-Te binary films were analysed by environment scanning electron microscopy (ESEM), energy dispersive spectroscopy(EDS) and X-ray diffraction (XRD). The results show that CNT/ Bi Te complex thermoelectric material can be electrodeposited from nitric 2 3 system containing Bi3+ and HTeO2+. The content of Bi and C elements increased gradually when deposition potential shifted negatively, and the content of Bi increased after MWNT was added into the solution. The introduction of MWNT didn’t affect the formation of matrix of Bi Te compound, but